Takahiro Nagata: Nanoscale Redox Reaction at Metal/Oxide Interface
Nanoscale Redox Reaction at Metal/Oxide Interface
Buch
- A Case Study on Schottky Contact and ReRAM
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- Springer Japan KK, 05/2020
- Einband: Kartoniert / Broschiert, Book
- Sprache: Englisch
- ISBN-13: 9784431548492
- Bestellnummer: 4040863
- Umfang: 70 Seiten
- Sonstiges: 30 schwarz-weiße und 10 farbige Abbildungen, Bibliographie
- Auflage: 2015
- Copyright-Jahr: 2016
- Gewicht: 180 g
- Maße: 227 x 154 mm
- Stärke: 12 mm
- Erscheinungstermin: 22.5.2020
- Serie: NIMS Monographs
Achtung: Artikel ist nicht in deutscher Sprache!
Kurzbeschreibung
This book examines the investigation and intentional control of metal / oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR).Beschreibung
Oxide materials are good candidates to replace Si devices which are facing performance limits since these materials display unique properties, either due to their composition design and / or doping technique.The author introduces a means of selecting oxide materials according to their functions and explains metal / oxide interface physics. Material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal / oxide interface structure and electrical properties with the data obtained using non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Oxide materials should support the development of future functional devices with High-k, ferroelectric, magnetic and optical properties. Optical sensors as an application of metal Schottky contact and metal / oxide resistive random access memory structure are also explained.
Inhaltsangabe
Workfunction Control of Metal Contact on Oxide Semiconductors.- Schottky Contact Formation on Oxide Semiconductors.- Surface Passivation Effect on Schottky Contact.- Resistive Changing Behaviour of Metal / Oxide Structure.- Forming Process of Oxide Based ReRAM Device with Metal / Oxide Interface.- Summary.Klappentext
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and / or doping techniques.The author introduces a means of selecting oxide materials according to their functions and explains metal / oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal / oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal / oxide resistive random access memory structure.